- Tytuł :
- Design and electrical modelling of a depletion-mode P-type triple-field-plated AlGaN/GaN on SiC HEMT with 2.45 kV breakdown voltage
- Autorzy :
- Źródło :
- Microsystem Technologies: Micro- and NanosystemsInformation Storage and Processing Systems. :1-16
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Czasopismo naukowe